Ultra-high purity ammonia (>99.999%)

Description

1. Product Overview

Ultra-high purity ammonia (99.999%+) is a specialty electronic-grade gas essential for compound semiconductor and LED manufacturing. Its primary industrial use is as a nitrogen precursor in metalorganic chemical vapor deposition (MOCVD) processes. The key value proposition is the elimination of trace moisture, oxygen, and carbon species that cause device defects, directly improving epitaxial wafer yields. As global demand for GaN and SiC power electronics accelerates, securing a reliable source of 99.999%+ ammonia is a strategic imperative for fab operators seeking to minimize downtime and maximize die performance.

2. Key Specifications & Technical Characteristics

• Chemical composition: Anhydrous ammonia (NH₃)

• Purity level: ≥ 99.999% (5N); total impurities ≤ 10 ppm; moisture (H₂O) ≤ 2 ppm; oxygen (O₂) ≤ 1 ppm; carbon oxides (CO+CO₂) ≤ 1 ppm; non-volatile residues ≤ 0.1 ppm

• Physical characteristics: Colorless, liquefied compressed gas; boiling point –33.34°C (1 atm); vapor density 0.59 (air = 1)

• Packaging options: High-pressure stainless steel ISO containers (20MT net), 950-liter Y-ton cylinders (750 kg), and 47-liter DOT cylinders (33 kg) with EP-grade internal surface treatment

• Shelf life: 24 months from date of analysis when stored in sealed, certified cylinders away from heat and oxidizers

3. Core Industrial Applications

• Primary industries: Compound semiconductors (GaN, GaAs, SiC), LED epitaxy, flat-panel display TFT backplanes, high-voltage power electronics, and photovoltaic cell manufacturing

• Specific operational use cases: MOCVD chamber nitrogen source; nitride passivation layer deposition; annealing atmosphere for III-V materials

• Performance advantage over alternatives: Lower impurity variance (≤ 1.5 ppm total O₂+CO₂) compared to standard 4N ammonia, reducing killer defect density by up to 60% in MOCVD runs

• Cost advantage: Higher wafer yield per batch (3–5% improvement) offsets the modest price premium, lowering effective cost per good die for high-value RF and power devices

4. Competitive Advantages

• Quality consistency: In-line FTIR and cavity ring-down spectroscopy (CRDS) for every batch; certificate of analysis (CoA) traceable to NIST standards

• Supply reliability: Dual-source production facilities (US Gulf Coast and Southeast Asia) with 99.5% on-time delivery track record over 36 months

• Logistics capability: Dedicated stainless steel container fleet with real-time GPS tracking and pressure telemetry; 48-hour emergency replacement program for critical fab disruptions

• Price competitiveness: Fixed quarterly pricing for contracts ≥12 months; volume discounts from 20MT/month

• Sustainability & environmental: Zero-vent cylinder return program; ammonia cracker integration for on-site H₂ recovery; ISO 14001 certified purification process

• Technical support: Included 24/7 application engineering, on-site purity validation at commissioning, and quarterly impurity trend reports

5. Commercial & Supply Information

• Minimum order quantity (MOQ): 950 kg (one Y-ton cylinder)

• BULK loading capacity: 20 metric tons (MT) per ISO container (net weight; tare approx. 4,500 kg)

• Loading capacity per container (standard 20FT ISO): 20 MT NH₃ (max filling ratio 0.53 kg/L per UN 1005)

• Lead time for bulk (20MT): 14 calendar days from confirmed PO and LC / advance payment

• Delivery incoterms: EXW (Houston, TX / Singapore), CIF major Asian ports (Shanghai, Busan, Kaohsiung), DDP for EU semiconductor clusters (Dresden, Grenoble)