Octafluorocyclobutane (C₄F₈) – semiconductor etch gas

£28,000.00

Octafluorocyclobutane (C₄F₈) is a high-purity perfluorocarbon etch gas engineered for advanced semiconductor fabrication, delivering exceptional selectivity and aspect ratio control in dielectric etch processes.

Competitive Advantage Spotlight
Unlike conventional etch gases, C₄F₈ offers superior profile control with minimal polymer residue, enabling finer geometries below 7nm while reducing chamber cleaning frequency and lowering cost of ownership for high-volume fabs.

Description

Product Overview
Octafluorocyclobutane (C₄F₈) is a high-purity perfluorinated etch gas essential for dielectric etch processes in advanced semiconductor manufacturing, particularly for high-aspect-ratio contacts and trenches. Its key value proposition lies in delivering superior etch selectivity and faster etch rates compared to conventional CF₄ or C₄F₆, directly enabling node scaling below 7nm. Strategically, C₄F₈ is critical as foundries and IDMs transition to 3D NAND, DRAM, and logic devices requiring <5nm feature fidelity, where etch uniformity dictates yield.

Competitive Advantage Spotlight
Superior etch selectivity (SiO₂:Si >30:1) with lower global warming potential (GWP ≈ 10,000 vs. C₄F₆’s 9,000, but significantly reduced flow rates per wafer). Backward compatibility with existing etch tools, eliminating capital retrofit costs.

Key Specifications & Technical Characteristics

  • Chemical composition: Cyclic perfluorocarbon C₄F₈, ≥99.999% (5N5) purity

  • Physical form: Colorless, odorless, non-flammable compressed gas

  • Density (gas, 25°C): 8.72 kg/m³; molecular weight 200.03 g/mol

  • Packaging: DOT/ISO-compliant 440L, 880L, and 1,470L steel cylinders; Y-valves for purge-assisted recovery

  • Shelf life: 24 months from date of analysis when stored upright below 50°C

Core Industrial Applications

  • Semiconductor (front-end): Oxide/nitride etch in 3D NAND (≥128 layers) and sub-10nm logic – replaces CHF₃/C₄F₆ for higher anisotropy.

  • MEMS & power devices: Deep silicon trench etch with <0.1 μm scalloping.

  • LCD/OLED display manufacturing: Dry etch for TFT arrays, achieving ±2% uniformity across Gen 10.5 glass substrates.

  • Cost advantage: 18–22% lower gas consumption per wafer vs. C₄F₆, extending bath life in abatement systems.

Competitive Advantages

  • Quality consistency: GC/MS batch-certified with <5 ppm H₂O, <2 ppm O₂, and <1 ppm metallic impurities.

  • Supply reliability: Redundant production in Korea and Japan; 48-hour emergency backup inventory at regional hubs.

  • Logistics: ISO tank containers for bulk >5MT; cylinder pallets stabilized for air/sea freight.

  • Price competitiveness: Long-term contracts (12–36 months) indexed to fluorspar and fluorine spot markets ±5% collar.

  • Sustainability: 98% of off-gas can be captured and reclaimed internally; supports SBTi-aligned Scope 3 reductions.

Commercial & Supply Information

  • Minimum order quantity (MOQ): BULK 20 metric tons (MT)

  • Loading capacity: 20 MT per ISO container (20’ full tank: 16 MT net; 40’ ISO: 20 MT net)

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