Sputtering Targets (Ta / Ti / Cu 5N)

£13,000.00

These 5N ultra-high-purity sputtering targets (Ta, Ti, Cu) deliver exceptional thin-film uniformity and batch-to-batch consistency for advanced semiconductor, flat-panel display, and photovoltaic manufacturing.

Competitive Advantage Spotlight
Rigorously certified via GD-MS and LECO analysis to guarantee <10 ppm total metallic impurities, our targets minimize particle defect generation during PVD processes—directly boosting wafer yields and reducing tool downtime compared to standard 4N grades.

Description

1. Product Overview

This product family comprises high-purity Tantalum (Ta), Titanium (Ti), and Copper (Cu) sputtering targets, each certified at 99.999% (5N) purity. They are precision-engineered for physical vapor deposition (PVD) processes in semiconductor wafer fabrication, advanced packaging, and high-performance thin-film coatings. The strategic value lies in minimizing thin-film defect densities (particles & voids) and ensuring batch-to-batch electrical uniformity—critical factors directly impacting semiconductor yield and device reliability in 12-inch wafer fabs and beyond.

2. Key Specifications & Technical Characteristics

Chemical Composition & Purity

  • Ta (Tantalum): 99.999% (5N) – Base metal balance; trace metal analysis via GDMS.

  • Ti (Titanium): 99.999% (5N) – Residual resistivity ratio (RRR) >100 available.

  • Cu (Copper): 99.999% (5N) – Oxygen content <5 ppm, alkali metals <1 ppm each.

Physical Characteristics

  • Form: Planar rectangular, circular, or rotary (cylindrical) targets.

  • Color/Density: Ta (grey, 16.65 g/cc), Ti (silver, 4.51 g/cc), Cu (red-orange, 8.94 g/cc).

  • Grain Size: ≤50 µm (customizable: 10–100 µm for sputtering uniformity).

  • Geometric Tolerance: Flatness ≤0.5 mm/m; surface roughness Ra ≤0.4 µm.

Packaging

  • Class 10 (ISO 4) cleanroom assembled. Double vacuum-sealed in inert gas with moisture barrier. Outer: ESD-safe rigid plastic or aluminum laminate bag + certified cleanroom carton.

Shelf Life

  • 36 months from date of analysis when stored in original unopened packaging at 15–25 °C, <30% RH.

3. Core Industrial Applications

Primary Industry Specific Use Case Performance Advantage over Standard (≤4N) Targets
Semiconductors Barrier/seed layers (Ta/Ti) for Cu interconnects at ≤7nm nodes 70% reduction in particle adders; no arcing defects.
Advanced Packaging Under bump metallization (UBM) & redistribution layers (RDL) Higher film density (≥99.9%) and corrosion resistance.
Flat Panel Displays Gate, source/drain electrodes (Cu/Ti) Lower electrical resistivity uniformity (<2% across 2.5m panel).
Data Storage Perpendicular magnetic recording media (Ta heat-sink layers) Consistent grain texture control for magnetic anisotropy.

Why this product outperforms alternatives:
The 5N purity eliminates micro-arcs caused by alkali metal inclusions. Our controlled grain structure reduces random target erosion, extending target life by 18–25% compared to unoptimized 5N equivalents.

4. Competitive Advantages

  • Quality Consistency: Each target batch is accompanied by a CoA (lot traceable) with full GDMS analysis and density mapping. Incoming raw material triple-assayed.

  • Supply Reliability: Dual-source agreement for base metal stock (US, JP, KR origins). Typical lead time: 15–20 days for standard sizes; safety stock held in EU/US/SEA hubs.

  • Logistics Capability: Cleanroom-to-cleanroom chain with real-time temperature/humidity logging. Express dispatch available for fab-down emergencies.

  • Price Competitiveness: Direct ownership of sputtering target bonding line (indium/epoxy-free bonds available). Eliminates two intermediary margins vs. resold products.

  • Sustainability: Ta/Ti from conflict-free, RMI-compliant smelters. Cu from >95% recycled feedstock upon request. 100% target back-machining service for end-of-life substrate reclamation.

  • Technical Support: Free sputtering yield modeling for your chamber geometry (Canon ANELVA, ULVAC, Applied Materials, TEL, Evatec). Bonding validation included.

5. Commercial & Supply Information

  • Minimum Order Quantity (MOQ):

    • Ta: 1 target (≥2 kg equivalent)

    • Ti: 1 target (≥3 kg equivalent)

    • Cu: 1 target (≥5 kg equivalent)
      *Test-grade 6″ diameter single targets available at 50% MOQ for qualification.*

  • BULK 20MT Loading Capacity:
    Not applicable – sputtering targets are high-value, low-volume.
    Equivalent consolidation:

    • Full 20′ container (palletized): Max 1.8 MT total (due to dense materials + packaging).

    • Actual practical limit per shipment: 800–1,200 kg (Ta heavy; Ti moderate; Cu moderate) depending on target dimensions.

  • Container Loading for Logistics Planning:

    • 20′ dry container (max gross ~24 MT): This product occupies ≤0.5 pallet space per 200 kg. → Bulk metal arrangement: Combine with other target materials (e.g., Al, Mo, W) to reach 20 MT consolidated shipment. For single product, typical order size is 50–500 kg per SKU.

  • Lead Time: 15 working days after payment and artwork approval. Expedited (5 days) at +25% uplift.

  • Incoterms: EXW (Hefei/Ningbo), FOB Shanghai, or CIF major global airport/sea port. Full insurance included for CIF.

Additional information

Price

per metric ton

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